
Infineon set the stage for long-term, profitable growth based on energy efficiency and CO 2 reduction at an early stage and announced the construction of the chip factory
Furthermore, its scalable family concept allows for a common software architecture enabling significant platform software savings.
Changes are on the horizon in this industry, as diesel locomotives and railcars will be incrementally replaced by environmentally-friendly, electric solutions.
Once fully equipped, the new module will generate €2 billion in additional annual revenue with products based on silicon carbide and gallium nitride.
Diagnosing sleep apnea is challenging and often includes observing a patient in a sleep laboratory, a stressful situation which can lead to deviating results.
The application gets the power it needs contactlessly from the mobile phone. This is also referred to as energy harvesting.
Infineon is acquiring 100% of the company's shares. Both parties have agreed not to disclose the amount of the transaction.
The creation of the VinFast–Infineon Competence Center (VICC) signals a new level in the relationship between both companies
Infineon is seeking public funding of around one billion euros. The company plans to invest a total of approximately five billion euros in the plant, which is set to begi
The high-performance microcontroller product leverages Infineon’s proprietary eNVM (embedded non-volatile memories) technology and will be manufactured at UMC’s Singapore
GaN technology is paving the way for more energy-efficient and CO 2-saving solutions that support decarbonization.
Infineon’s nvSRAM technology combines high-performance SRAM with best-in-class SONOS non-volatile technology.
The planned acquisition of Cypress is a landmark step in Infineon’s strategic development. Infineon will strengthen and accelerate our profitable growth and put our busin
With its improved pin positioning, the module also ensures short and clean commutation loops with reduced stray module inductances.
The devices come in half-bridge configuration with an on-state resistance (R DS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package.
- IGBT, 31A I(C), 600V V(BR)CES, N
- TRANS PNP 32V 0.8A SOT-23
- IC SRAM 36MBIT PARALLEL 165FBGA
- IC SECONDARY SIDE CTRLR 8DSO
- IC TELECOM INTERFACE 144-LQFP
- IGBT 1200V 11A 60W TO247AC
- TRENCH <= 40V
- IC PWR SWITCH N-CHANNEL 1:1 DPAK
- PSOC4
- IC FRAM 8MBIT SPI 20MHZ 8GQFN
- IC MCU 16BIT 64KB MROM 80PQFP
- IC LED DRIVER LINEAR DIM TO263-7
- IC MCU 16BIT 64KB FLASH
- N-CHANNEL POWER MOSFET
- SCR MODULE 1.6KV 520A MODULE
- IC SRAM 18MBIT PARALLEL 165FBGA
- IC MCU 32BIT 32KB FLASH 40QFN
- 2 CH PFM/PWM DC/DC CONVERTER
- IC NVSRAM 4MBIT PAR 44TSOP II
- IC MCU 16BIT 128KB FLASH 100QFP
- IC MCU 32BIT 512KB ROM 120LQFP
- MOSFET N-CH 40V 42A DPAK
- IC MCU 120LQFP
- MOSFET N-CH DUAL 8V SOT-363
- DIFFERENTIATED MOSFETS
- RF TRANS NPN 12V 6GHZ SOT323-3
- MOSFET N-CH 150V 1.9A 8SO
- IC MCU 32BIT 128KB FLASH 100LQFP
- IC MCU 120LQFP



















































