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- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Description: IC DISCRETE 600V TO252-3
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AIHD10N60RFATMA1 Specifications:
- MfrPart.: AIHD10N60RFATMA1
- Mfr: Infineon Technologies
- Description: IC DISCRETE 600V TO252-3
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tape & Reel (TR)
- Series: -
- PartStatus: Active
- IGBTType: Trench Field Stop
- Voltage-CollectorEmitterBreakdown(Max): 600 V
- Current-Collector(Ic)(Max): 20 A
- Current-CollectorPulsed(Icm): 30 A
- Vce(on)(Max)@VgeIc: 2.5V @ 15V, 10A
- Power-Max: 150 W
- SwitchingEnergy: 190µJ (on), 160µJ (off)
- InputType: Standard
- GateCharge: 64 nC
- Td(on/off)@25°C: 12ns/168ns
- TestCondition: 400V, 10A, 26Ohm, 15V
- ReverseRecoveryTime(trr): -
- OperatingTemperature: -40°C ~ 175°C (TJ)
- MountingType: Surface Mount
- Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- AIHD10N60RFATMA1 Infineon, IC DISCRETE 600V TO252-3, Discrete Semiconductor Products~Transistors - IGBTs - Single
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