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BFP196WE6327 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF Package/Case: SC-82A, SOT-343
- Description: RF TRANSISTOR, L BAND, NPN
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BFP196WE6327 Specifications:
- MfrPart.: BFP196WE6327
- Mfr: Infineon Technologies
- Description: RF TRANSISTOR, L BAND, NPN
- Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
- Package: Bulk
- Series: -
- PartStatus: Active
- TransistorType: NPN
- Voltage-CollectorEmitterBreakdown(Max): 12V
- Frequency-Transition: 7.5GHz
- NoiseFigure(dBTyp@f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain: 12.5dB ~ 19dB
- Power-Max: 700mW
- DCCurrentGain(hFE)(Min)@IcVce: 70 @ 50mA, 8V
- Current-Collector(Ic)(Max): 150mA
- OperatingTemperature: 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: SC-82A, SOT-343
- BFP196WE6327 Infineon, RF TRANSISTOR, L BAND, NPN, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
BFP196WE6327, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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