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BSB104N08NP3GXUSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: MG-WDSON-2, CanPAK M™
- Description: MOSFET N-CH 80V 13A/50A 2WDSON
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BSB104N08NP3GXUSA1 Specifications:
- MfrPart.: BSB104N08NP3GXUSA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 80V 13A/50A 2WDSON
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR)
- Series: OptiMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 80 V
- Current-ContinuousDrain(Id)@25°C: 13A (Ta), 50A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 10.4mOhm @ 10A, 10V
- Vgs(th)(Max)@Id: 3.5V @ 40µA
- GateCharge(Qg)(Max)@Vgs: 31 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 2100 pF @ 40 V
- FETFeature: -
- PowerDissipation(Max): 2.8W (Ta), 42W (Tc)
- OperatingTemperature: -40°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: MG-WDSON-2, CanPAK M™
- BSB104N08NP3GXUSA1 Infineon, MOSFET N-CH 80V 13A/50A 2WDSON, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
BSB104N08NP3GXUSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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