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BSC019N02KSGAUMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TDSON-8-1
- Description: MOSFET N-CH 20V 30A/100A TDSON
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BSC019N02KSGAUMA1 Specifications:
- MfrPart.: BSC019N02KSGAUMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 20V 30A/100A TDSON
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR)
- Series: OptiMOS™
- PartStatus: Not For New Designs
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 20 V
- Current-ContinuousDrain(Id)@25°C: 30A (Ta), 100A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5V
- RdsOn(Max)@IdVgs: 1.95mOhm @ 50A, 4.5V
- Vgs(th)(Max)@Id: 1.2V @ 350µA
- GateCharge(Qg)(Max)@Vgs: 85 nC @ 4.5 V
- Vgs(Max): ±12V
- InputCapacitance(Ciss)(Max)@Vds: 13000 pF @ 10 V
- FETFeature: -
- PowerDissipation(Max): 2.8W (Ta), 104W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TDSON-8-1
- BSC019N02KSGAUMA1 Infineon, MOSFET N-CH 20V 30A/100A TDSON, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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