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BSM75GB170DN2HOSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules Package/Case: Chassis Mount
- Description: IGBT, 110A I(C), 1700V V(BR)CES
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BSM75GB170DN2HOSA1 Specifications:
- MfrPart.: BSM75GB170DN2HOSA1
- Mfr: Infineon Technologies
- Description: IGBT, 110A I(C), 1700V V(BR)CES
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
- Package: 4
- Series: Bulk
- PartStatus: -
- IGBTType: Active
- Configuration: -
- Voltage-CollectorEmitterBreakdown(Max): Half Bridge
- Current-Collector(Ic)(Max): 1.7 V
- Power-Max: 110 A
- Vce(on)(Max)@VgeIc: 625 W
- Current-CollectorCutoff(Max): 3.9V @ 15V, 75A
- InputCapacitance(Cies)@Vce: -
- Input: 11 nF @ 25 V
- NTCThermistor: Standard
- OperatingTemperature: No
- MountingType: 150°C (TJ)
- Package/Case: Chassis Mount
- BSM75GB170DN2HOSA1 Infineon, IGBT, 110A I(C), 1700V V(BR)CES, Discrete Semiconductor Products~Transistors - IGBTs - Modules
BSM75GB170DN2HOSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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