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FF200R12KE3B2HOSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules Package/Case: Module
- Description: IGBT MOD 1200V 295A 1050W
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FF200R12KE3B2HOSA1 Specifications:
- MfrPart.: FF200R12KE3B2HOSA1
- Mfr: Infineon Technologies
- Description: IGBT MOD 1200V 295A 1050W
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
- Package: Tray
- Series: -
- PartStatus: Active
- IGBTType: -
- Configuration: Half Bridge
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): 295 A
- Power-Max: 1050 W
- Vce(on)(Max)@VgeIc: 2.15V @ 15V, 200A
- Current-CollectorCutoff(Max): 5 mA
- InputCapacitance(Cies)@Vce: 14 nF @ 25 V
- Input: Standard
- NTCThermistor: No
- OperatingTemperature: -40°C ~ 125°C
- MountingType: Chassis Mount
- Package/Case: Module
- FF200R12KE3B2HOSA1 Infineon, IGBT MOD 1200V 295A 1050W, Discrete Semiconductor Products~Transistors - IGBTs - Modules
FF200R12KE3B2HOSA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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