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IGW03N120H2FKSA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-247-3
- Description: INSULATED GATE BIPOLAR TRANSISTO
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IGW03N120H2FKSA1 Specifications:
- MfrPart.: IGW03N120H2FKSA1
- Mfr: Infineon Technologies
- Description: INSULATED GATE BIPOLAR TRANSISTO
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Bulk
- Series: -
- PartStatus: Active
- IGBTType: -
- Voltage-CollectorEmitterBreakdown(Max): 1.2 kV
- Current-Collector(Ic)(Max): 9.6 A
- Current-CollectorPulsed(Icm): 9.9 A
- Vce(on)(Max)@VgeIc: 2.8V @ 15V, 3A
- Power-Max: 62.5 W
- SwitchingEnergy: 290µJ
- InputType: Standard
- GateCharge: 22 nC
- Td(on/off)@25°C: 9.2ns/281ns
- TestCondition: 800V, 3A, 82Ohm, 15V
- ReverseRecoveryTime(trr): -
- OperatingTemperature: -40°C ~ 150°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-247-3
- IGW03N120H2FKSA1 Infineon, INSULATED GATE BIPOLAR TRANSISTO, Discrete Semiconductor Products~Transistors - IGBTs - Single
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