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IMBG120R350M1HXTMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO263-7-12
- Description: TRANS SJT N-CH 1.2KV 4.7A TO263
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IMBG120R350M1HXTMA1 Specifications:
- MfrPart.: IMBG120R350M1HXTMA1
- Mfr: Infineon Technologies
- Description: TRANS SJT N-CH 1.2KV 4.7A TO263
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: CoolSiC™
- PartStatus: Active
- FETType: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- DraintoSourceVoltage(Vdss): 1.2 kV
- Current-ContinuousDrain(Id)@25°C: 4.7A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): -
- RdsOn(Max)@IdVgs: 468mOhm @ 2A, 18V
- Vgs(th)(Max)@Id: 5.7V @ 1mA
- GateCharge(Qg)(Max)@Vgs: 5.9 nC @ 18 V
- Vgs(Max): +18V, -15V
- InputCapacitance(Ciss)(Max)@Vds: 196 pF @ 800 V
- FETFeature: Standard
- PowerDissipation(Max): 65W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TO263-7-12
- IMBG120R350M1HXTMA1 Infineon, TRANS SJT N-CH 1.2KV 4.7A TO263, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IMBG120R350M1HXTMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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