
- Manufacturer: Infineon Technologies
 - Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO263-3
 - Description: MOSFET N-CH 100V 67A D2PAK
 - COMPETITIVE PRICE and DELIVERY TIME
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IPB12CN10N G Specifications: 
- MfrPart.: IPB12CN10N G
 - Mfr: Infineon Technologies
 - Description: MOSFET N-CH 100V 67A D2PAK
 - Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
 - Package: Tape & Reel (TR)
 - Series: OptiMOS™
 - PartStatus: Obsolete
 - FETType: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - DraintoSourceVoltage(Vdss): 100 V
 - Current-ContinuousDrain(Id)@25°C: 67A (Tc)
 - DriveVoltage(MaxRdsOnMinRdsOn): 10V
 - RdsOn(Max)@IdVgs: 12.6mOhm @ 67A, 10V
 - Vgs(th)(Max)@Id: 4V @ 83µA
 - GateCharge(Qg)(Max)@Vgs: 65 nC @ 10 V
 - Vgs(Max): ±20V
 - InputCapacitance(Ciss)(Max)@Vds: 4320 pF @ 50 V
 - FETFeature: -
 - PowerDissipation(Max): 125W (Tc)
 - OperatingTemperature: -55°C ~ 175°C (TJ)
 - MountingType: Surface Mount
 - SupplierDevicePackage: PG-TO263-3
 - IPB12CN10N G Infineon, MOSFET N-CH 100V 67A D2PAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
 
IPB12CN10N G, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.

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