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IPB35N12S3L26ATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO263-3-2
- Description: MOSFET N-CH 120V 35A TO263-3-2
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IPB35N12S3L26ATMA1 Specifications:
- MfrPart.: IPB35N12S3L26ATMA1
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 120V 35A TO263-3-2
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: Automotive, AEC-Q101, OptiMOS™
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 120 V
- Current-ContinuousDrain(Id)@25°C: 35A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): -
- RdsOn(Max)@IdVgs: 26.3mOhm @ 35A, 10V
- Vgs(th)(Max)@Id: 2.4V @ 39µA
- GateCharge(Qg)(Max)@Vgs: 30 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 2700 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 71W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TO263-3-2
- IPB35N12S3L26ATMA1 Infineon, MOSFET N-CH 120V 35A TO263-3-2, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB35N12S3L26ATMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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