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IPG20N10S4L22ATMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays Package/Case: 8-PowerVDFN
- Description: MOSFET 2N-CH 8TDSON
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IPG20N10S4L22ATMA1 Specifications:
- MfrPart.: IPG20N10S4L22ATMA1
- Mfr: Infineon Technologies
- Description: MOSFET 2N-CH 8TDSON
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: Automotive, AEC-Q101, OptiMOS™
- PartStatus: Active
- FETType: 2 N-Channel (Dual)
- FETFeature: Logic Level Gate
- DraintoSourceVoltage(Vdss): 100V
- Current-ContinuousDrain(Id)@25°C: 20A
- RdsOn(Max)@IdVgs: 22mOhm @ 17A, 10V
- Vgs(th)(Max)@Id: 2.1V @ 25µA
- GateCharge(Qg)(Max)@Vgs: 27nC @ 10V
- InputCapacitance(Ciss)(Max)@Vds: 1755pF @ 25V
- Power-Max: 60W
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- Package/Case: 8-PowerVDFN
- IPG20N10S4L22ATMA1 Infineon, MOSFET 2N-CH 8TDSON, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
IPG20N10S4L22ATMA1, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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