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IPI023NE7N3 G Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO262-3
- Description: MOSFET N-CH 75V 120A TO262-3
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IPI023NE7N3 G Specifications:
- MfrPart.: IPI023NE7N3 G
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 75V 120A TO262-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: OptiMOS™
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 75 V
- Current-ContinuousDrain(Id)@25°C: 120A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): -
- RdsOn(Max)@IdVgs: 2.3mOhm @ 100A, 10V
- Vgs(th)(Max)@Id: 3.8V @ 273µA
- GateCharge(Qg)(Max)@Vgs: 206 nC @ 10 V
- Vgs(Max): -
- InputCapacitance(Ciss)(Max)@Vds: 14400 pF @ 37.5 V
- FETFeature: -
- PowerDissipation(Max): 300W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: PG-TO262-3
- IPI023NE7N3 G Infineon, MOSFET N-CH 75V 120A TO262-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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