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IRFB4110GPBF Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: TO-220AB
- Description: IRFB4110 - 12V-300V N-CHANNEL PO
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IRFB4110GPBF Specifications:
- MfrPart.: IRFB4110GPBF
- Mfr: Infineon Technologies
- Description: IRFB4110 - 12V-300V N-CHANNEL PO
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Bulk
- Series: HEXFET®
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 100 V
- Current-ContinuousDrain(Id)@25°C: 120A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 4.5mOhm @ 75A, 10V
- Vgs(th)(Max)@Id: 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 210 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 9.62 pF @ 50 V
- FETFeature: -
- PowerDissipation(Max): 370W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: TO-220AB
- IRFB4110GPBF Infineon, IRFB4110 - 12V-300V N-CHANNEL PO, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IRFB4110GPBF, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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