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IRFSL59N10D Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: TO-262
- Description: MOSFET N-CH 100V 59A TO262
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IRFSL59N10D Specifications:
- MfrPart.: IRFSL59N10D
- Mfr: Infineon Technologies
- Description: MOSFET N-CH 100V 59A TO262
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: HEXFET®
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 100 V
- Current-ContinuousDrain(Id)@25°C: 59A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 25mOhm @ 35.4A, 10V
- Vgs(th)(Max)@Id: 5.5V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 114 nC @ 10 V
- Vgs(Max): ±30V
- InputCapacitance(Ciss)(Max)@Vds: 2450 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 3.8W (Ta), 200W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: TO-262
- IRFSL59N10D Infineon, MOSFET N-CH 100V 59A TO262, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IRFSL59N10D, Infineon authentic parts in stock from Infineon authorized distributors, order today, can ship immediately.
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