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SPD08P06PGBTMA1 Images
- Manufacturer: Infineon Technologies
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PG-TO252-3
- Description: MOSFET P-CH 60V 8.83A TO252-3
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SPD08P06PGBTMA1 Specifications:
- MfrPart.: SPD08P06PGBTMA1
- Mfr: Infineon Technologies
- Description: MOSFET P-CH 60V 8.83A TO252-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: SIPMOS®
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 60 V
- Current-ContinuousDrain(Id)@25°C: 8.83A (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 6.2V
- RdsOn(Max)@IdVgs: 300mOhm @ 10A, 6.2V
- Vgs(th)(Max)@Id: 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 13 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 420 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 42W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PG-TO252-3
- SPD08P06PGBTMA1 Infineon, MOSFET P-CH 60V 8.83A TO252-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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